13GHz 4.67dB NF CMOS low-noise amplifier

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The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier (LNA) are presented. Effects of substrate resistances on LNA performance are discussed. The LNA has 4.67 dB noise figure and +8.5 dBm of input-referred third-order intercept point (IIP3) with a power consumption of 9.72 mW.
Publisher
Inst Engineering Technology-Iet
Issue Date
2003-07
Language
English
Article Type
Article
Keywords

RF-ICS; OPTIMIZATION; INDUCTORS

Citation

ELECTRONICS LETTERS, v.39, no.14, pp.1056 - 1058

ISSN
0013-5194
DOI
10.1049/el:20030687
URI
http://hdl.handle.net/10203/78325
Appears in Collection
RIMS Journal Papers
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