EFFECTS OF DEPOSITION TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TA2O5 FILM AND THE FORMATION OF INTERFACIAL SIO2

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High-quality Ta2O5 thin films for high-density memory devices were prepared at low temperatures by electron cyclotron resonance plasma-enhanced chemical vapor depostion (ECR-PECVD) without postannealing treatment. The effects of deposition temperature on the microstructure, composition, and electrical properties of the dielectric films were studied. The increase in deposition temperature from 145 degrees C to 205 degrees C improved the stoichiometry of the Ta2O5 thin films. As a consequence, E(BD) increased from 3.3 MV/cm to 4.4 MV/cm, and epsilon(Ta2O5) increased from 14 to 25, Interfacial SiO2 layer was observed by cross-sectional TEM, and its effects on the electrical properties of the overall dielectric film were also studied. The incubation period in which interfacial SiO2 grows was discussed with regard to reactivity between oxygen and Si substrate.
Publisher
MATERIALS RESEARCH SOCIETY
Issue Date
1995-11
Language
English
Article Type
Article
Citation

JOURNAL OF MATERIALS RESEARCH, v.10, no.11, pp.2864 - 2869

ISSN
0884-2914
URI
http://hdl.handle.net/10203/77859
Appears in Collection
RIMS Journal PapersMS-Journal Papers(저널논문)
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