DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HK | ko |
dc.contributor.author | Suh, TS | ko |
dc.contributor.author | Choe, BY | ko |
dc.contributor.author | Shinn, KS | ko |
dc.contributor.author | Cho, Gyuseong | ko |
dc.contributor.author | PerezMendez, V | ko |
dc.date.accessioned | 2013-03-03T05:30:28Z | - |
dc.date.available | 2013-03-03T05:30:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.399, no.1, pp.324 - 334 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77444 | - |
dc.description.abstract | Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si : H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light (< 1 mu s) which simulate the transit of energetic charged particles or gamma-rays, and the other for rather long pulses of light (greater than or equal to 1 ms) which simulate X-ray exposure in medical imaging. The photoconductive gain in our devices could be calculated by comparing the photo-induced signals from n-i-n photoconductors and forward biased p-i-n photodiodes to the maximum signals from corresponding reverse biased p-i-n photodiodes. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We obtained typical charge gains of 3-9 for short pulses and a few hundreds for long pulses at a dark current density level of 10 mA/cm(2). Various gain results are discussed in terms of the device structure, applied bias and dark-current density. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | LAYERS | - |
dc.subject | BIAS | - |
dc.title | Transient photoconductive gain in a-Si:H devices and its applications in radiation detection | - |
dc.type | Article | - |
dc.identifier.wosid | A1997YF19500013 | - |
dc.identifier.scopusid | 2-s2.0-0031275938 | - |
dc.type.rims | ART | - |
dc.citation.volume | 399 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 324 | - |
dc.citation.endingpage | 334 | - |
dc.citation.publicationname | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | - |
dc.contributor.localauthor | Cho, Gyuseong | - |
dc.contributor.nonIdAuthor | Lee, HK | - |
dc.contributor.nonIdAuthor | Suh, TS | - |
dc.contributor.nonIdAuthor | Choe, BY | - |
dc.contributor.nonIdAuthor | Shinn, KS | - |
dc.contributor.nonIdAuthor | PerezMendez, V | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | photoconductive gain | - |
dc.subject.keywordAuthor | photocurrent | - |
dc.subject.keywordAuthor | photoconductivity | - |
dc.subject.keywordAuthor | a-Si:H | - |
dc.subject.keywordAuthor | p-i-n photodiode | - |
dc.subject.keywordAuthor | n-i-n photoconductor | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | BIAS | - |
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