Detection of charged particles and X-rays by scintillator layers coupled to amorphous silicon photodiode arrays

Cited 16 time in webofscience Cited 0 time in scopus
  • Hit : 414
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorJing, Tko
dc.contributor.authorGoodman, CAko
dc.contributor.authorDrewery, Jko
dc.contributor.authorCho, Gyuseongko
dc.contributor.authorHong, WSko
dc.contributor.authorLee, Hko
dc.contributor.authorKaplan, SNko
dc.contributor.authorPerezMendez, Vko
dc.contributor.authorWildermuth, Dko
dc.date.accessioned2013-03-03T05:21:18Z-
dc.date.available2013-03-03T05:21:18Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-01-
dc.identifier.citationNUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.368, no.3, pp.757 - 764-
dc.identifier.issn0168-9002-
dc.identifier.urihttp://hdl.handle.net/10203/77414-
dc.description.abstractHydrogenated amorphous silicon (a-Si:H) p-i-n diodes with transparent metallic contacts are shown to be suitable for detecting charged particles, electrons, and X-rays. When coupled to a suitable scintillator using CsI(Tl) as the scintillator we show a capability to detect minimum ionizing particles with SIN similar to 20. We demonstrate such an arrangement by operating a p-i-n diode in photovolaic mode (reverse bias). Moreover, we show that a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3-8 higher light sensitivity for shaping times of 1 mu s n-i-n devices have similar optical gain as the p-i-n photoconductor for short integrating times (<10 mu S). However, n-i-n devices exhibit much higher gain for a long term integration (10 ms) than the p-i-n ones. High sensitivity photosensors are very desirable for X-ray medical imaging because radiation exposure dose can be reduced significantly. The scintillator CsI layers we made have higher spatial resolution than the Kodak commercial scintillator screens due to their internal columnar structure which can collimate the scintillator light. Evaporated CsI layers are shown to be more resistant to radiation damage than the crystalline bulk CsI(Tl).-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectRADIATION-DAMAGE-
dc.subjectCSI(TL) CRYSTALS-
dc.subjectPERFORMANCE-
dc.subjectSIGNAL-
dc.titleDetection of charged particles and X-rays by scintillator layers coupled to amorphous silicon photodiode arrays-
dc.typeArticle-
dc.identifier.wosidA1996TR03000021-
dc.identifier.scopusid2-s2.0-4244156134-
dc.type.rimsART-
dc.citation.volume368-
dc.citation.issue3-
dc.citation.beginningpage757-
dc.citation.endingpage764-
dc.citation.publicationnameNUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT-
dc.identifier.doi10.1016/0168-9002(95)00602-8-
dc.contributor.localauthorCho, Gyuseong-
dc.contributor.nonIdAuthorJing, T-
dc.contributor.nonIdAuthorGoodman, CA-
dc.contributor.nonIdAuthorDrewery, J-
dc.contributor.nonIdAuthorHong, WS-
dc.contributor.nonIdAuthorLee, H-
dc.contributor.nonIdAuthorKaplan, SN-
dc.contributor.nonIdAuthorPerezMendez, V-
dc.contributor.nonIdAuthorWildermuth, D-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRADIATION-DAMAGE-
dc.subject.keywordPlusCSI(TL) CRYSTALS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusSIGNAL-
Appears in Collection
NE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 16 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0