DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, JH | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-03-03T05:03:49Z | - |
dc.date.available | 2013-03-03T05:03:49Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.36, pp.L1068 - L1070 | - |
dc.identifier.uri | http://hdl.handle.net/10203/77347 | - |
dc.description.abstract | Post-hydrogen treatment of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film using a mercury-sensitized photochemical vapor deposition (photo-CVD) method was proposed as a novel method to improve film quality. The activation energy of the hydrogen-treated him decreased from 0.467 eV to 0.441 eV and its conductivity increased from 3.7 x 10(-7) Scm(-1) to 6.5 x 10(-7) Scm(-1) as the hydrogen treatment time increased from 0 (without hydrogen treatment) to 30 minutes. These film changes are thought to occur in the bulk of the boron-doped a-SiC:H him. When this method was applied to the boron-doped a-SiC:H layer of pin-type amorphous silicon solar cells, the open circuit voltage and fill factor increased without causing a decrease in the short circuit current, resulting in a conversion efficiency enhancement of about 7%. This improvement in the cell performance can be explained by an increase in the built-in potential of the cell due to a decrease in the activation energy of the p-layer. | - |
dc.language | English | - |
dc.publisher | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | CONVERSION EFFICIENCY | - |
dc.title | High-quality boron-doped a-SiC:H film by post-hydrogen treatment using a mercury-sensitized photochemical vapor deposition method and its application to a-Si:H solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XU88300004 | - |
dc.identifier.scopusid | 2-s2.0-0031210919 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.beginningpage | L1068 | - |
dc.citation.endingpage | L1070 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Jang, JH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | post-hydrogen treatment | - |
dc.subject.keywordAuthor | mercury-sensitized photo-CVD | - |
dc.subject.keywordAuthor | boron-doped a-SiC, H | - |
dc.subject.keywordAuthor | activation energy | - |
dc.subject.keywordAuthor | conductivity | - |
dc.subject.keywordAuthor | optical property | - |
dc.subject.keywordAuthor | hydrogen diffusion | - |
dc.subject.keywordAuthor | built-in potential | - |
dc.subject.keywordAuthor | a-Si, H solar cell | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | CONVERSION EFFICIENCY | - |
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