Hydrogenation time dependence of a-SiC:H-based P-I-N thin film visible light-emitting diode characteristics

Abstract

The hydrogenation time dependence of hydrogenation effects on the performance of a-SiC:H-based p-i-n thin film light-emitting diodes (TFLEDs) in the visible range has been investigated. It was found that hydrogenation markedly improved the device performance, and that increasing the hydrogenation time beyond a saturation point degraded the device performance; that is, as compared with the performance of a TFLED hydrogenated for a short time (similar to 15 min), the threshold voltage increased slightly, the EL peak shifted towards a longer wavelength, and the brightness decreased. In particular; after hydrogenation for 45 min, the brightness decreased to 15 cd/m(2).