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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

"Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys" (vol 98, pg 054311, 2005)

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dc.contributor.authorMyong, SYko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2007-07-02T08:23:25Z-
dc.date.available2007-07-02T08:23:25Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-05-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.99, pp.850 - 858-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/770-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.title"Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys" (vol 98, pg 054311, 2005)-
dc.typeArticle-
dc.identifier.wosid000237943800074-
dc.identifier.scopusid2-s2.0-33744805395-
dc.type.rimsART-
dc.citation.volume99-
dc.citation.beginningpage850-
dc.citation.endingpage858-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.2199752-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorMyong, SY-
dc.type.journalArticleCorrection-
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