DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baik, SJ | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2007-07-02T08:07:33Z | - |
dc.date.available | 2007-07-02T08:07:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.81, pp.5186 - 5188 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/767 | - |
dc.description.abstract | Nanocrystal floating gate memory employing an amorphous carbon (a-C)/SiO2 double-layered tunnel barrier was fabricated. The band gap of a-C and conduction band discontinuity between a-C and Si was estimated to be 1.95 and 0.4 eV, respectively. In addition, interface states density of the a-C/SiO2/channel Si was estimated from the capacitance-voltage measurement. The nanocrystal memory using this tunnel barrier exhibited enhanced charge retention than that employing a single SiO2 tunnel barrier whereas the injection efficiency is comparable between them, which is due to the asymmetrical band profile of the tunnel barrier. (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1533119]. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CHARGE | - |
dc.title | Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO2 tunnel barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000180160800030 | - |
dc.identifier.scopusid | 2-s2.0-0347926384 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.beginningpage | 5186 | - |
dc.citation.endingpage | 5188 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Baik, SJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHARGE | - |
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