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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP

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dc.contributor.authorChang, Kee-Jooko
dc.contributor.authorCHEONG, BHko
dc.date.accessioned2013-03-03T01:21:56Z-
dc.date.available2013-03-03T01:21:56Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-04-
dc.identifier.citationMODERN PHYSICS LETTERS B, v.9, no.9, pp.511 - 530-
dc.identifier.issn0217-9849-
dc.identifier.urihttp://hdl.handle.net/10203/76459-
dc.description.abstractWe review some of the recent theoretical studies on the atomic structure, the stability, and the vibrational modes of donor-induced defect levels in GaAs and InP. For Si and S donors, the microscopic origin of the DX center is investigated and a review is given of the shallow-to-deep DX level transition under hydrostatic pressure. We also discuss the band structure and the chemical bonding effects on the stability of donor impurities, which are associated with broken-bond and breathing-mode lattice relaxations.-
dc.languageEnglish-
dc.publisherWORLD SCIENTIFIC PUBL CO PTE LTD-
dc.subjectNORM-CONSERVING PSEUDOPOTENTIALS-
dc.subjectLATTICE-RELAXATION MODEL-
dc.subjectALXGA1-XAS ALLOYS-
dc.subjectHYDROSTATIC-PRESSURE-
dc.subjectPERSISTENT PHOTOCONDUCTIVITY-
dc.subjectELECTRONIC-STRUCTURE-
dc.subjectCHEMICAL TRENDS-
dc.subjectTOTAL-ENERGY-
dc.subjectDEEP DONORS-
dc.subjectSEMICONDUCTORS-
dc.titleSTRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP-
dc.typeArticle-
dc.identifier.wosidA1995RD68100001-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue9-
dc.citation.beginningpage511-
dc.citation.endingpage530-
dc.citation.publicationnameMODERN PHYSICS LETTERS B-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorCHEONG, BH-
dc.type.journalArticleReview-
dc.subject.keywordPlusNORM-CONSERVING PSEUDOPOTENTIALS-
dc.subject.keywordPlusLATTICE-RELAXATION MODEL-
dc.subject.keywordPlusALXGA1-XAS ALLOYS-
dc.subject.keywordPlusHYDROSTATIC-PRESSURE-
dc.subject.keywordPlusPERSISTENT PHOTOCONDUCTIVITY-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusCHEMICAL TRENDS-
dc.subject.keywordPlusTOTAL-ENERGY-
dc.subject.keywordPlusDEEP DONORS-
dc.subject.keywordPlusSEMICONDUCTORS-
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