DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jin, YG | ko |
dc.contributor.author | Lee, KH | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-03T01:21:28Z | - |
dc.date.available | 2013-03-03T01:21:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-07 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.9, no.30, pp.6351 - 6358 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76457 | - |
dc.description.abstract | We calculate the Coulomb pseudopotential mu* for the simple hexagonal phase of Si at a pressure of 14 GPa using a full-dielectric-matrix approach within the local-density-functional approximation. With all of the screening effects such as the crystal potential, local-field, and exchange-correlation effects, the value of mu* is estimated to be 0.104. Considering only the crystal potential effect, mu* is found to be very close to that of a free-electron gas. The exchange-correlation effect on the electron dielectric response function decreases the dielectric screening, especially for large wave vectors, giving rise to an increase of mu*, while the local-field effect which results from directional bonds slightly reduces mu*. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ELECTRON-PHONON INTERACTIONS | - |
dc.subject | DENSITY-FUNCTIONAL APPROACH | - |
dc.subject | STATIC DIELECTRIC MATRICES | - |
dc.subject | HIGHLY CONDENSED SI | - |
dc.subject | HIGH-PRESSURE | - |
dc.subject | SILICON | - |
dc.subject | SUPERCONDUCTIVITY | - |
dc.subject | TRANSITIONS | - |
dc.subject | GPA | - |
dc.subject | GE | - |
dc.title | First-principles calculation of the Coulomb pseudopotential mu* for the simple hexagonal phase of Si | - |
dc.type | Article | - |
dc.identifier.wosid | A1997XP23600004 | - |
dc.identifier.scopusid | 2-s2.0-6244225965 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 30 | - |
dc.citation.beginningpage | 6351 | - |
dc.citation.endingpage | 6358 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Jin, YG | - |
dc.contributor.nonIdAuthor | Lee, KH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRON-PHONON INTERACTIONS | - |
dc.subject.keywordPlus | DENSITY-FUNCTIONAL APPROACH | - |
dc.subject.keywordPlus | STATIC DIELECTRIC MATRICES | - |
dc.subject.keywordPlus | HIGHLY CONDENSED SI | - |
dc.subject.keywordPlus | HIGH-PRESSURE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordPlus | GPA | - |
dc.subject.keywordPlus | GE | - |
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