Homo-epitaxial deposition of CeO2 film by chemical vapour deposition on a CeO2/Ni substrate prepared by electron beam evaporation

Abstract

Crack-free CeO2 films have been grown by chemical vapour deposition (CVD) on a Ni substrate where a thin CeO2 film was pre-deposited by electron beam (e-beam) evaporation. Homo-epitaxial growth of CeO2 film by CVD led to the development of a sharp cube texture inherited from a CeO2 film pre-deposited by e-beam evaporation. The CeO2 film grown by CVD was deposited at 470 degrees C for 10 min and the film growth rate was measured as 40 nm min(-1). The extra XRD peaks having a relationship with a cube orientation of 25-28 degrees rotation around the [001] axis, i.e. the surface normal of the Ni substrate, were developed at the Ni/CeO2 interface during film deposition. The present results show that the combination of CVD and e-beam evaporation is useful for the fast deposition of CeO2 film with a sharp cube texture.