DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, KS | ko |
dc.contributor.author | Kang, MS | ko |
dc.contributor.author | Lee, KM | ko |
dc.contributor.author | Kim, DS | ko |
dc.contributor.author | Choi, CK | ko |
dc.contributor.author | Yun, SM | ko |
dc.contributor.author | Chang, Hong-Young | ko |
dc.contributor.author | Kim, KH | ko |
dc.date.accessioned | 2013-03-02T23:36:35Z | - |
dc.date.available | 2013-03-02T23:36:35Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-05 | - |
dc.identifier.citation | THIN SOLID FILMS, v.345, no.1, pp.45 - 49 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76034 | - |
dc.description.abstract | Fluorocarbonated-SiO2 films were prepared on a p-type Si(100) substrate using FSi(OC2H5)(3) (FTES) and O-2 mixture gases by a helicon plasma source. High density O-2/FTES/Ar plasma of similar to 10(12) cm(-3) is obtained at low pressure (<3 mTorr) with RF power above 900 W in the helicon plasma source where the FTES and O-2 gases are greatly dissociated. The fluorocarbonated-SiO2 film deposited in the helicon plasma chemical vapor deposition contains C-F bonds which are not found in the fluorocarbonated-SiO2 film made by thermal chemical vapor deposition, where the FTES and O-2 react chemically on the substrate. Fourier transform infrared and X-ray photoelectron spectroscopy spectra show that the film has Si-F, Si-O, and C-F bonds. The Si-F and C-F bonds may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, 8 x 10(-9) A/cm(2), and >12 MV/cm, respectively. However the dielectric constant and leakage current density of the film annealed at 500 degrees C are about 3.2 and 9 x 10(-11) A/cm(2), respectively. The step-coverage of the deposited fluorocarbonated-SiO2 film in 0.3 mu m metal pattern is about 91%. (C) 1999 Elsevier Science S.A. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | LOW DIELECTRIC-CONSTANT | - |
dc.subject | INTERLAYER DIELECTRICS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SIOF FILM | - |
dc.subject | STABILITY | - |
dc.title | Formation and characterization of the fluorocarbonated-SiO2 films by O-2/FTES-helicon plasma chemical vapor deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000080949700011 | - |
dc.identifier.scopusid | 2-s2.0-0033531829 | - |
dc.type.rims | ART | - |
dc.citation.volume | 345 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 45 | - |
dc.citation.endingpage | 49 | - |
dc.citation.publicationname | THIN SOLID FILMS | - |
dc.contributor.localauthor | Chang, Hong-Young | - |
dc.contributor.nonIdAuthor | Oh, KS | - |
dc.contributor.nonIdAuthor | Kang, MS | - |
dc.contributor.nonIdAuthor | Lee, KM | - |
dc.contributor.nonIdAuthor | Kim, DS | - |
dc.contributor.nonIdAuthor | Choi, CK | - |
dc.contributor.nonIdAuthor | Yun, SM | - |
dc.contributor.nonIdAuthor | Kim, KH | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | plasma chemical vapor deposition | - |
dc.subject.keywordAuthor | silicon dioxide | - |
dc.subject.keywordAuthor | helicon plasma source | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordPlus | LOW DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | INTERLAYER DIELECTRICS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SIOF FILM | - |
dc.subject.keywordPlus | STABILITY | - |
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