DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, IJ | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Kim, KS | ko |
dc.contributor.author | Choe, BD | ko |
dc.contributor.author | Lim, H | ko |
dc.date.accessioned | 2013-03-02T23:32:56Z | - |
dc.date.available | 2013-03-02T23:32:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/76021 | - |
dc.description.abstract | The conduction-band discontinuity Delta E(c) of AlxGa1-xAs/In0.5Ga0.5P heterojunctions grown by liquid phase epitaxy on GaAs substrate was studied using the capacitance-voltage (C-V) characterization technique. The C-V measurements were made on a series of samples with x ranging from zero to about 0.3, The carrier profiles for the samples with x = 0 and x = 0.06 give Delta E(c) values of 90 and 40 meV, respectively, showing the type I (straddling) band line-up. For x = 0.18 and 0.29, the values of Delta E(c) were 45 and 110 meV, respectively, with the carrier profile characteristic of the type II (staggered) band line-up. From these results. Delta E(c) of the heterojunction is found to vanish at about x = 0.12. This agrees well with our previous result determined from the photoluminescence measurements. (C) 1996 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PROFILING TECHNIQUE | - |
dc.subject | HETEROJUNCTIONS | - |
dc.subject | DISCONTINUITIES | - |
dc.subject | ALIGNMENTS | - |
dc.subject | VALENCE | - |
dc.subject | OFFSETS | - |
dc.title | Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis | - |
dc.type | Article | - |
dc.identifier.wosid | A1996UQ18900040 | - |
dc.identifier.scopusid | 2-s2.0-0030169727 | - |
dc.type.rims | ART | - |
dc.citation.volume | 68 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 3488 | - |
dc.citation.endingpage | 3490 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.115767 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kim, IJ | - |
dc.contributor.nonIdAuthor | Kim, KS | - |
dc.contributor.nonIdAuthor | Choe, BD | - |
dc.contributor.nonIdAuthor | Lim, H | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PROFILING TECHNIQUE | - |
dc.subject.keywordPlus | HETEROJUNCTIONS | - |
dc.subject.keywordPlus | DISCONTINUITIES | - |
dc.subject.keywordPlus | ALIGNMENTS | - |
dc.subject.keywordPlus | VALENCE | - |
dc.subject.keywordPlus | OFFSETS | - |
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