DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Keller, S | ko |
dc.contributor.author | Minsky, MS | ko |
dc.contributor.author | Hu, E | ko |
dc.contributor.author | Mishra, UK | ko |
dc.contributor.author | DenBaars, SP | ko |
dc.date.accessioned | 2013-03-02T23:18:10Z | - |
dc.date.available | 2013-03-02T23:18:10Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-08 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75987 | - |
dc.description.abstract | We have systematically studied the influence of Si doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy. The twelve period MQWs were grown by metalorganic chemical vapor deposition. Si doping in the GaN barriers was varied from 1 X 10(17) to 3 X 10(19) cm(-1). Information on the structural quality of the MQWs as a function of Si doping was extracted from the linewidth broadening of the higher-order superlattice satellite peaks measured in HRXRD. The HRXRD measurements indicate that increased Si doping results in better interface properties of the MQWs. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease from similar to 30 ns (for n < 1 x 10(17) cm(-3)) to similar to 4 ns (for n = 3 x 10(19) cm(-3)) with increasing Si doping concentration. The reduced Stokes shift, the decrease in radiative recombination lifetime, and the increase in the interface quality indicate that Si doping results in a decrease in carrier localization at potential fluctuations in the InGaN active layers. (C) 1998 American Institute of Physics. [S0003-6951(98)00434-3] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | GAN | - |
dc.subject | SAPPHIRE | - |
dc.subject | GROWTH | - |
dc.subject | DIODES | - |
dc.title | Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells | - |
dc.type | Article | - |
dc.identifier.wosid | 000075572000038 | - |
dc.identifier.scopusid | 2-s2.0-0000900175 | - |
dc.type.rims | ART | - |
dc.citation.volume | 73 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1128 | - |
dc.citation.endingpage | 1130 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.122105 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Keller, S | - |
dc.contributor.nonIdAuthor | Minsky, MS | - |
dc.contributor.nonIdAuthor | Hu, E | - |
dc.contributor.nonIdAuthor | Mishra, UK | - |
dc.contributor.nonIdAuthor | DenBaars, SP | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DIODES | - |
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