DC Field | Value | Language |
---|---|---|
dc.contributor.author | Serna, R | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | Lohmeier, M | ko |
dc.contributor.author | Vlieg, E | ko |
dc.contributor.author | Polman, A | ko |
dc.contributor.author | Alkemade, PFA | ko |
dc.date.accessioned | 2013-03-02T23:07:38Z | - |
dc.date.available | 2013-03-02T23:07:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-03 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.79, no.5, pp.2658 - 2662 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75949 | - |
dc.description.abstract | Erbium is incorporated in crystalline silicon during molecular beam epitaxy on Si(100) at 600 degrees C, either in vacuum (6x10(-11) mbar) or in an O-2 ambient (4x10(-10) mbar). Strong Er segregation takes place during growth in vacuum, and only 23% of the total deposited Er is incorporated in the epitaxial layer. Films grown in an O-2 ambient show no Er segregation, and an Er concentration of 1.5x10(19) Er/cm(3) is incorporated in the crystal. The O content is 4x10(19) O/cm(3). Photoluminescence spectra taken at 10 K show the characteristic intra-4f luminescence of Er3+ at 1.54 mu m for both samples, grown with and without O-2. Differences found in the spectral shape indicate a difference in the local environment (presumably O coordination) of Er for the two cases. The O codoped film shows a 7 times higher Er luminescence peak intensity than the film grown without O. This is due to the higher incorporated Er concentration as well as an increased luminescence efficiency (lifetime without O: 0.33 ms, with O: 1.81 ms). The Er excitation efficiency is lower in the O codoped film than in the O-undoped film, which is attributed to the lower minority carrier lifetime in the O-doped material. Thermal annealing of the O codoped film at 1000 degrees C increases the excitation efficiency and hence the Er luminescence intensity. (C) 1996 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | DOPED SILICON | - |
dc.subject | LUMINESCENCE | - |
dc.title | Incorporation and optical activation of erbium in silicon using molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.wosid | A1996TY11900073 | - |
dc.identifier.scopusid | 2-s2.0-0000545433 | - |
dc.type.rims | ART | - |
dc.citation.volume | 79 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 2658 | - |
dc.citation.endingpage | 2662 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.361136 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | Serna, R | - |
dc.contributor.nonIdAuthor | Lohmeier, M | - |
dc.contributor.nonIdAuthor | Vlieg, E | - |
dc.contributor.nonIdAuthor | Polman, A | - |
dc.contributor.nonIdAuthor | Alkemade, PFA | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DOPED SILICON | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
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