Incorporation and optical activation of erbium in silicon using molecular beam epitaxy

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dc.contributor.authorSerna, Rko
dc.contributor.authorShin, JungHoonko
dc.contributor.authorLohmeier, Mko
dc.contributor.authorVlieg, Eko
dc.contributor.authorPolman, Ako
dc.contributor.authorAlkemade, PFAko
dc.date.accessioned2013-03-02T23:07:38Z-
dc.date.available2013-03-02T23:07:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1996-03-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.79, no.5, pp.2658 - 2662-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/75949-
dc.description.abstractErbium is incorporated in crystalline silicon during molecular beam epitaxy on Si(100) at 600 degrees C, either in vacuum (6x10(-11) mbar) or in an O-2 ambient (4x10(-10) mbar). Strong Er segregation takes place during growth in vacuum, and only 23% of the total deposited Er is incorporated in the epitaxial layer. Films grown in an O-2 ambient show no Er segregation, and an Er concentration of 1.5x10(19) Er/cm(3) is incorporated in the crystal. The O content is 4x10(19) O/cm(3). Photoluminescence spectra taken at 10 K show the characteristic intra-4f luminescence of Er3+ at 1.54 mu m for both samples, grown with and without O-2. Differences found in the spectral shape indicate a difference in the local environment (presumably O coordination) of Er for the two cases. The O codoped film shows a 7 times higher Er luminescence peak intensity than the film grown without O. This is due to the higher incorporated Er concentration as well as an increased luminescence efficiency (lifetime without O: 0.33 ms, with O: 1.81 ms). The Er excitation efficiency is lower in the O codoped film than in the O-undoped film, which is attributed to the lower minority carrier lifetime in the O-doped material. Thermal annealing of the O codoped film at 1000 degrees C increases the excitation efficiency and hence the Er luminescence intensity. (C) 1996 American Institute of Physics.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectDOPED SILICON-
dc.subjectLUMINESCENCE-
dc.titleIncorporation and optical activation of erbium in silicon using molecular beam epitaxy-
dc.typeArticle-
dc.identifier.wosidA1996TY11900073-
dc.identifier.scopusid2-s2.0-0000545433-
dc.type.rimsART-
dc.citation.volume79-
dc.citation.issue5-
dc.citation.beginningpage2658-
dc.citation.endingpage2662-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.361136-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorSerna, R-
dc.contributor.nonIdAuthorLohmeier, M-
dc.contributor.nonIdAuthorVlieg, E-
dc.contributor.nonIdAuthorPolman, A-
dc.contributor.nonIdAuthorAlkemade, PFA-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDOPED SILICON-
dc.subject.keywordPlusLUMINESCENCE-
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