ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | POLMAN, A | ko |
| dc.contributor.author | VANDENHOVEN, GN | ko |
| dc.contributor.author | CUSTER, JS | ko |
| dc.contributor.author | Shin, JungHoon | ko |
| dc.contributor.author | SERNA, R | ko |
| dc.contributor.author | ALKEMADE, PFA | ko |
| dc.date.accessioned | 2013-03-02T22:39:44Z | - |
| dc.date.available | 2013-03-02T22:39:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-02 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.77, no.3, pp.1256 - 1262 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/75919 | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | IMPLANTED SILICON | - |
| dc.subject | LUMINESCENCE | - |
| dc.subject | SI | - |
| dc.subject | IMPURITIES | - |
| dc.title | ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1995QE04900048 | - |
| dc.identifier.scopusid | 2-s2.0-0009293110 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 77 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 1256 | - |
| dc.citation.endingpage | 1262 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.identifier.doi | 10.1063/1.358927 | - |
| dc.contributor.localauthor | Shin, JungHoon | - |
| dc.contributor.nonIdAuthor | POLMAN, A | - |
| dc.contributor.nonIdAuthor | VANDENHOVEN, GN | - |
| dc.contributor.nonIdAuthor | CUSTER, JS | - |
| dc.contributor.nonIdAuthor | SERNA, R | - |
| dc.contributor.nonIdAuthor | ALKEMADE, PFA | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | IMPLANTED SILICON | - |
| dc.subject.keywordPlus | LUMINESCENCE | - |
| dc.subject.keywordPlus | SI | - |
| dc.subject.keywordPlus | IMPURITIES | - |
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