DC Field | Value | Language |
---|---|---|
dc.contributor.author | VANDENHOVEN, GN | ko |
dc.contributor.author | Shin, JungHoon | ko |
dc.contributor.author | POLMAN, A | ko |
dc.contributor.author | LOMBARDO, S | ko |
dc.contributor.author | CAMPISANO, SU | ko |
dc.date.accessioned | 2013-03-02T22:37:23Z | - |
dc.date.available | 2013-03-02T22:37:23Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-08 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.78, no.4, pp.2642 - 2650 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75911 | - |
dc.description.abstract | The photoluminescence of erbium-doped semi-insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single-crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er to fluences ranging from 0.05 to 6 x 10(15) ions/cm(2), and annealed at 300-1000 degrees C. Upon optical pumping near 500 nm, the samples show room-temperature luminescence around 1.54 mu m due to intra-4f transitions in Er3+, excited by photogenerated carriers. The strongest luminescence is obtained after 400 degrees C annealing. Two classes of Er3+ can be distinguished, characterized by luminescence lifetimes of 170 and 800 mu s. The classes are attributed to Er3+ in Si-rich and in O-rich environments. Photoluminescence excitation spectroscopy on a sample with 1 x 10(15) Er/cm(2) shows that similar to 2% of-the implanted Er is optically active. No quenching of the Er luminescence efficiency is observed between 77 K and room temperature in this Si-based semiconductor. The internal quantum efficiency for the excitation of Er3+ via photogenerated carriers is 10(-3) at room temperature. A model is presented which explains the luminescence data in terms of trapping of electrical carriers at localized Er-related defects, and subsequent energy transfer to Er3+ ions, which can then decay by emission of 1.5 mu m photons. (C) 1995 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SEMIINSULATING POLYCRYSTALLINE SILICON | - |
dc.subject | INTRA-4F-SHELL LUMINESCENCE | - |
dc.subject | QUENCHING MECHANISM | - |
dc.subject | LOCAL-STRUCTURE | - |
dc.subject | INP | - |
dc.subject | ER | - |
dc.subject | YB | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | SI | - |
dc.title | ERBIUM IN OXYGEN-DOPED SILICON - OPTICAL-EXCITATION | - |
dc.type | Article | - |
dc.identifier.wosid | A1995RP71800070 | - |
dc.identifier.scopusid | 2-s2.0-0029357994 | - |
dc.type.rims | ART | - |
dc.citation.volume | 78 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 2642 | - |
dc.citation.endingpage | 2650 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.doi | 10.1063/1.360125 | - |
dc.contributor.localauthor | Shin, JungHoon | - |
dc.contributor.nonIdAuthor | VANDENHOVEN, GN | - |
dc.contributor.nonIdAuthor | POLMAN, A | - |
dc.contributor.nonIdAuthor | LOMBARDO, S | - |
dc.contributor.nonIdAuthor | CAMPISANO, SU | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SEMIINSULATING POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | INTRA-4F-SHELL LUMINESCENCE | - |
dc.subject.keywordPlus | QUENCHING MECHANISM | - |
dc.subject.keywordPlus | LOCAL-STRUCTURE | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | ER | - |
dc.subject.keywordPlus | YB | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SI | - |
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