Effect of Oxygen Annealing of MgO thin Films on the Phase Formation and the Electrical Properties of PZT/MgO/Si Structure

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The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to 700℃ and different deposition rates of 3.4 to 11.6Å/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.
Publisher
한국세라믹학회
Issue Date
2000-01
Language
English
Citation

한국세라믹학회지, v.6, no.1, pp.68 - 73

ISSN
1229-7801
URI
http://hdl.handle.net/10203/75894
Appears in Collection
MS-Journal Papers(저널논문)
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