Observation of domain nucleation and growth during switching process

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The domain nucleation and growth during the switching process in ferroelectric PZT thin film capacitors was observed using atomic force microscope (AFM) technique combined with a lock-in amplifier. The measured phase difference between the tip vibration signal induced by the piezoelectric displacement and the low ac modulation voltage applied to the ferroelectric capacitor was used to determine the domain polarity whereas the tip vibration amplitude was used to determine the piezoelectric coefficient. As de bias field approached the coercive field, a rapid decrease of the amplitude was observed with a local phase reversal. This decrease of amplitude is probably due to the competition between the domains with opposite polarization, and the local phase reversal is attributed to the existence of preferential nucleation sites. The first regions with reversed polarization were observed at about 3.4 MV/m and the switching was completed at 5.5 MV/m.
Publisher
GORDON BREACH SCI PUBL LTD
Issue Date
1999
Language
English
Article Type
Article; Proceedings Paper
Citation

FERROELECTRICS, v.223, no.1-4, pp.143 - 143

ISSN
0015-0193
DOI
10.1080/00150199908260564
URI
http://hdl.handle.net/10203/75678
Appears in Collection
MS-Journal Papers(저널논문)
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