Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO(2) multilayer reflector
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, Giwan | ko |
| dc.contributor.author | Park, JD | ko |
| dc.date.accessioned | 2013-03-02T20:29:50Z | - |
| dc.date.available | 2013-03-02T20:29:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-08 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.36, no.16, pp.1435 - 1437 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/75390 | - |
| dc.description.abstract | A ZnO-based fdm bulk acoustic resonator (FBAR) with a W/SiO2 multilayer reflector has been fabricated using a two-step ZnO deposition. The FEAR showed a large return loss of 35dB at similar to 2GHz and a high quality factor (high-Q) of similar to 4000. The resonance characteristics depended largely on the multilayer reflector and ZnO film. | - |
| dc.language | English | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | Fabrication of ZnO-based film bulk acoustic resonator devices using W/SiO(2) multilayer reflector | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000088762800069 | - |
| dc.identifier.scopusid | 2-s2.0-0034250336 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 36 | - |
| dc.citation.issue | 16 | - |
| dc.citation.beginningpage | 1435 | - |
| dc.citation.endingpage | 1437 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.contributor.localauthor | Yoon, Giwan | - |
| dc.contributor.nonIdAuthor | Park, JD | - |
| dc.type.journalArticle | Article | - |
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