DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, CH | ko |
dc.contributor.author | Jeon, JW | ko |
dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2007-07-02T06:07:33Z | - |
dc.date.available | 2007-07-02T06:07:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-06 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.87, no.12, pp.8778 - 8785 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/752 | - |
dc.description.abstract | The properties of thin p-type microcrystalline silicon (p-mu c-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) have been investigated. At the initial growth regime (< 100 Angstrom) of the p-mu c-Si:H onto p-a-SiC:H, Si nanocrystallites were proved to be formed in amorphous matrix. The thin p-mu c-Si:H was introduced as a novel constant band gap buffer at the p/i interface of amorphous silicon solar cells. The open circuit voltage and the blue response of the cell were improved significantly by inserting the p-mu c-Si:H at the p/i interface as a buffer when compared with those of the bufferless cell. Our numerical modeling on the constant band gap buffer elucidates clearly that the buffering effects of the thin p-mu c-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface. (C) 2000 American Institute of Physics. [S0021-8979(00)03912-8]. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject | SIMULATION | - |
dc.subject | SURFACE | - |
dc.subject | CARBON | - |
dc.subject | MODEL | - |
dc.subject | FILMS | - |
dc.subject | LAYER | - |
dc.title | Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000087346400079 | - |
dc.identifier.scopusid | 2-s2.0-0012520529 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 8778 | - |
dc.citation.endingpage | 8785 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.contributor.nonIdAuthor | Lee, CH | - |
dc.contributor.nonIdAuthor | Jeon, JW | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | PHOTOCHEMICAL VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LAYER | - |
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