DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, BJ | ko |
dc.contributor.author | Park, JE | ko |
dc.contributor.author | Kim, Bongsoo | ko |
dc.contributor.author | Park, Joon Taik | ko |
dc.date.accessioned | 2013-03-02T19:58:37Z | - |
dc.date.available | 2013-03-02T19:58:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-12 | - |
dc.identifier.citation | JOURNAL OF ORGANOMETALLIC CHEMISTRY, v.616, no.1-2, pp.128 - 134 | - |
dc.identifier.issn | 0022-328X | - |
dc.identifier.uri | http://hdl.handle.net/10203/75264 | - |
dc.description.abstract | Dimeric dimethylindium azide, [Me2In(mu -N-3)](2) (1), was prepared from the reaction of Me3In with HN3. A single-crystal X-ray diffraction study reveals that 1 exists as a three-dimensional network of three symmetry-independent azide-bridged, centrosymmetric dimers. In each dimer, the two azido groups lying in the same plane of the (In-N)(2) ring have a linear geometry, and the two indium atoms exhibit a distorted octahedral geometry. InN thin films were grown with 1 on Si(lll) substrates in the temperature range 350-450 degreesC in the absence of carrier gas by a low-pressure chemical vapor deposition method. The stoichiometry of the resulting films was determined by X-ray photoelectron spectroscopy (XPS). The films are nitrogen-deficient InN (In:N approximate to 1:0.60) with:high surface impurity concentrations (C approximate to 20%, O approximate to 27%). The film structure was examined by X-ray diffraction (XRD) and: scanning electron microscopy (SEM). The films appear to be polycrystalline and show diffraction patterns characteristic of the expected hexagonal wurtzite structure. (C) 2000 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | GROUP-III NITRIDES | - |
dc.subject | CRYSTAL-STRUCTURE | - |
dc.subject | GALLIUM NITRIDE | - |
dc.subject | BUFFER LAYER | - |
dc.subject | GAN GROWTH | - |
dc.subject | DERIVATIVES | - |
dc.subject | SI(100) | - |
dc.subject | ALN | - |
dc.title | Structural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films | - |
dc.type | Article | - |
dc.identifier.wosid | 000166128700015 | - |
dc.identifier.scopusid | 2-s2.0-0000768783 | - |
dc.type.rims | ART | - |
dc.citation.volume | 616 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 128 | - |
dc.citation.endingpage | 134 | - |
dc.citation.publicationname | JOURNAL OF ORGANOMETALLIC CHEMISTRY | - |
dc.contributor.localauthor | Kim, Bongsoo | - |
dc.contributor.localauthor | Park, Joon Taik | - |
dc.contributor.nonIdAuthor | Bae, BJ | - |
dc.contributor.nonIdAuthor | Park, JE | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | indium | - |
dc.subject.keywordAuthor | azides | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | indium nitride | - |
dc.subject.keywordAuthor | single-source precursors | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | GROUP-III NITRIDES | - |
dc.subject.keywordPlus | CRYSTAL-STRUCTURE | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | GAN GROWTH | - |
dc.subject.keywordPlus | DERIVATIVES | - |
dc.subject.keywordPlus | SI(100) | - |
dc.subject.keywordPlus | ALN | - |
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