Structural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films

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dc.contributor.authorBae, BJko
dc.contributor.authorPark, JEko
dc.contributor.authorKim, Bongsooko
dc.contributor.authorPark, Joon Taikko
dc.date.accessioned2013-03-02T19:58:37Z-
dc.date.available2013-03-02T19:58:37Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-12-
dc.identifier.citationJOURNAL OF ORGANOMETALLIC CHEMISTRY, v.616, no.1-2, pp.128 - 134-
dc.identifier.issn0022-328X-
dc.identifier.urihttp://hdl.handle.net/10203/75264-
dc.description.abstractDimeric dimethylindium azide, [Me2In(mu -N-3)](2) (1), was prepared from the reaction of Me3In with HN3. A single-crystal X-ray diffraction study reveals that 1 exists as a three-dimensional network of three symmetry-independent azide-bridged, centrosymmetric dimers. In each dimer, the two azido groups lying in the same plane of the (In-N)(2) ring have a linear geometry, and the two indium atoms exhibit a distorted octahedral geometry. InN thin films were grown with 1 on Si(lll) substrates in the temperature range 350-450 degreesC in the absence of carrier gas by a low-pressure chemical vapor deposition method. The stoichiometry of the resulting films was determined by X-ray photoelectron spectroscopy (XPS). The films are nitrogen-deficient InN (In:N approximate to 1:0.60) with:high surface impurity concentrations (C approximate to 20%, O approximate to 27%). The film structure was examined by X-ray diffraction (XRD) and: scanning electron microscopy (SEM). The films appear to be polycrystalline and show diffraction patterns characteristic of the expected hexagonal wurtzite structure. (C) 2000 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectGROUP-III NITRIDES-
dc.subjectCRYSTAL-STRUCTURE-
dc.subjectGALLIUM NITRIDE-
dc.subjectBUFFER LAYER-
dc.subjectGAN GROWTH-
dc.subjectDERIVATIVES-
dc.subjectSI(100)-
dc.subjectALN-
dc.titleStructural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films-
dc.typeArticle-
dc.identifier.wosid000166128700015-
dc.identifier.scopusid2-s2.0-0000768783-
dc.type.rimsART-
dc.citation.volume616-
dc.citation.issue1-2-
dc.citation.beginningpage128-
dc.citation.endingpage134-
dc.citation.publicationnameJOURNAL OF ORGANOMETALLIC CHEMISTRY-
dc.contributor.localauthorKim, Bongsoo-
dc.contributor.localauthorPark, Joon Taik-
dc.contributor.nonIdAuthorBae, BJ-
dc.contributor.nonIdAuthorPark, JE-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorindium-
dc.subject.keywordAuthorazides-
dc.subject.keywordAuthorchemical vapour deposition-
dc.subject.keywordAuthorindium nitride-
dc.subject.keywordAuthorsingle-source precursors-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusGROUP-III NITRIDES-
dc.subject.keywordPlusCRYSTAL-STRUCTURE-
dc.subject.keywordPlusGALLIUM NITRIDE-
dc.subject.keywordPlusBUFFER LAYER-
dc.subject.keywordPlusGAN GROWTH-
dc.subject.keywordPlusDERIVATIVES-
dc.subject.keywordPlusSI(100)-
dc.subject.keywordPlusALN-
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