Reliability of High Dielectric Ba0.5Sr0.5TiO3 Capacitors Using Iridium Electrode

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In order to clarify the decrease of the dielectric constant of Ba0.5Sr0.5TiO3 capacitor under the electrical stress, the degradation phenomena including resistant degradation were studied in detail. They were well explained by the increases of the dielectric relaxation and dielectric dispersion which are caused by the generation of oxygen vacancies. This explanation was proved by several additional experiments such as the investigation of Schottky barrier with the stress, the observation of some bubbles and O-2 plasma annealing. It was also confirmed that the electrical degradation of BST capacitor is effectively suppressed by using iridium (Ir) electrode, especially as a top electrode.
Publisher
Taylor & Francis Ltd
Issue Date
1999-01
Language
English
Article Type
Article; Proceedings Paper
Keywords

THIN-FILMS; DEGRADATION; RELAXATION

Citation

INTEGRATED FERROELECTRICS, v.24, no.1-4, pp.45 - 55

ISSN
1058-4587
URI
http://hdl.handle.net/10203/74604
Appears in Collection
EE-Journal Papers(저널논문)
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