DC Field | Value | Language |
---|---|---|
dc.contributor.author | Schmidt, TJ | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Yang, W | ko |
dc.date.accessioned | 2013-03-02T15:52:33Z | - |
dc.date.available | 2013-03-02T15:52:33Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.74, no.2, pp.245 - 247 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74277 | - |
dc.description.abstract | Room-temperature deep-ultraviolet-stimulated emission (SE) has been observed from optically pumped metalorganic chemical vapor deposition grown Al(x)Ga(1-x)N thin films. SE has been observed for Al concentrations as high as x = 0.26, with a resultant SE wavelength as low as 328 nm at room temperature. The results obtained for the Al(x)Ga(1-x)N layers are compared with In(x)Ga(1-x)N layers of comparable alloy concentration and GaN reference layers. The incorporation of Al into GaN is shown to result in Al(x)Ga(1-x)N layers with similar high excitation-density emission behavior as GaN, in contrast to In(x)Ga(1-x)N layers, which exhibit markedly different SE behavior. The observation of room-temperature SE from Al(x)Ga(1-x)N layers of significant Al concentration illustrates the suitability of Al(x)Ga(1-x)N based structures, not only for use in deep-ultraviolet detectors, but also as a potential source of deep-ultraviolet laser radiation. (C) 1999 American Institute of Physics. [S0003-6951(99)02702-3]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GAN | - |
dc.title | Room-temperature deep-ultraviolet-stimulated emission Al(x)Ga(1-x)N thin films grown on sapphire | - |
dc.type | Article | - |
dc.identifier.wosid | 000077942400029 | - |
dc.identifier.scopusid | 2-s2.0-0001619322 | - |
dc.type.rims | ART | - |
dc.citation.volume | 74 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 245 | - |
dc.citation.endingpage | 247 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.123269 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Schmidt, TJ | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Yang, W | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | GAN | - |
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