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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

INVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEM

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dc.contributor.authorPark, Hyung-Hoko
dc.contributor.authorNahm, Sahnko
dc.contributor.authorSuh, Kyung-Sooko
dc.contributor.authorLee, Jong-Lamko
dc.contributor.authorCho, Kyoung-Ikko
dc.contributor.authorKim, Kyung-Sooko
dc.contributor.authorPark, Sin-Chongko
dc.contributor.authorLee, Jae-Sungko
dc.contributor.authorLee, Yong-Hyunko
dc.date.accessioned2013-03-02T14:54:13Z-
dc.date.available2013-03-02T14:54:13Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-07-
dc.identifier.citationJOURNAL OF NON-CRYSTALLINE SOLIDS, v.187, pp.149 - 155-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/10203/74066-
dc.description.abstractThe thermal behavior of antifusing device characteristic with SiO2/Ti0.1W0.9 system was investigated. Amelioration and destruction of device properties were found after annealing at 400 degrees C and 600 degrees C, respectively. Through in situ heat treatment at 400 degrees C, it was revealed that metallic tungsten was formed at the interface due to decomposition of WO3. Annealing above 600 degrees C induces decomposition of SiO2 and results in failure of the antifusing device characteristic.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectGATE ARRAY APPLICATIONS-
dc.subjectANTIFUSE STRUCTURE-
dc.titleINVESTIGATION ON THE INTERFACIAL REACTION OF SIO2/TI0.1W0.9 SYSTEM-
dc.typeArticle-
dc.identifier.wosidA1995RK19500027-
dc.type.rimsART-
dc.citation.volume187-
dc.citation.beginningpage149-
dc.citation.endingpage155-
dc.citation.publicationnameJOURNAL OF NON-CRYSTALLINE SOLIDS-
dc.identifier.doi10.1016/0022-3093(95)00128-X-
dc.contributor.localauthorPark, Sin-Chong-
dc.contributor.nonIdAuthorPark, Hyung-Ho-
dc.contributor.nonIdAuthorNahm, Sahn-
dc.contributor.nonIdAuthorSuh, Kyung-Soo-
dc.contributor.nonIdAuthorLee, Jong-Lam-
dc.contributor.nonIdAuthorCho, Kyoung-Ik-
dc.contributor.nonIdAuthorKim, Kyung-Soo-
dc.contributor.nonIdAuthorLee, Jae-Sung-
dc.contributor.nonIdAuthorLee, Yong-Hyun-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusGATE ARRAY APPLICATIONS-
dc.subject.keywordPlusANTIFUSE STRUCTURE-
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EE-Journal Papers(저널논문)
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