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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

DETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS

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dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorKIM, KSko
dc.contributor.authorRYU, SWko
dc.contributor.authorKIM, SKko
dc.contributor.authorCHOE, BDko
dc.contributor.authorLIM, Hko
dc.date.accessioned2013-03-02T14:45:00Z-
dc.date.available2013-03-02T14:45:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1995-04-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.66, no.14, pp.1785 - 1787-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/74033-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCHEMICAL VAPOR-DEPOSITION-
dc.subjectLIQUID-PHASE EPITAXY-
dc.subjectPROFILING TECHNIQUE-
dc.subjectHETEROJUNCTION-
dc.subjectLASERS-
dc.subjectVALENCE-
dc.subjectOFFSETS-
dc.titleDETERMINATION OF THE CONDUCTION-BAND DISCONTINUITIES OF IN0.5GA0.5P/IN-1-XGAXAS1-YPY BY CAPACITANCE-VOLTAGE ANALYSIS-
dc.typeArticle-
dc.identifier.wosidA1995QQ37700025-
dc.identifier.scopusid2-s2.0-21544442174-
dc.type.rimsART-
dc.citation.volume66-
dc.citation.issue14-
dc.citation.beginningpage1785-
dc.citation.endingpage1787-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.113321-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorKIM, KS-
dc.contributor.nonIdAuthorRYU, SW-
dc.contributor.nonIdAuthorKIM, SK-
dc.contributor.nonIdAuthorCHOE, BD-
dc.contributor.nonIdAuthorLIM, H-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusLIQUID-PHASE EPITAXY-
dc.subject.keywordPlusPROFILING TECHNIQUE-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusLASERS-
dc.subject.keywordPlusVALENCE-
dc.subject.keywordPlusOFFSETS-
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