DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Gainer, GH | ko |
dc.contributor.author | Lam, JB | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Yang, W | ko |
dc.contributor.author | Jhe, W | ko |
dc.date.accessioned | 2013-03-02T14:44:00Z | - |
dc.date.available | 2013-03-02T14:44:00Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-03 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.61, no.11, pp.7203 - 7206 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/74031 | - |
dc.description.abstract | We present a comprehensive study of the optical characteristics of AlxGa1-xN epilayers (0 less than or equal to x less than or equal to 0.6) by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. For AlxGa1-xN with large Al content, we observed an anomalous PL temperature dependence: (i) an "S-shaped'' PL peak energy shift (decrease-increase-decrease) and (ii) an "inverted S-shaped" spectral width broadening (increase-decrease-increase) with increasing temperature. We observed that the thermal decrease in integrated PL intensity was suppressed and the effective lifetime was enhanced in the temperature region showing the anomalous temperature-induced emission behavior, reflecting superior luminescence efficiency by suppressing nonradiative processes. All these features were enhanced as the Al mole fraction was increased. From these results, the anomalous temperature-induced emission shift is attributed to energy rail states due to alloy potential inhomogeneities in the AlxGa1-xN epilayers with large Al content. | - |
dc.language | English | - |
dc.publisher | AMERICAN PHYSICAL SOC | - |
dc.subject | MULTIPLE-QUANTUM WELLS | - |
dc.subject | RECOMBINATION DYNAMICS | - |
dc.subject | LOCALIZED EXCITONS | - |
dc.subject | EMISSION | - |
dc.subject | SHIFT | - |
dc.title | Dynamics of anomalous optical transitions in AlxGa1-xN alloys | - |
dc.type | Article | - |
dc.identifier.wosid | 000086031200012 | - |
dc.identifier.scopusid | 2-s2.0-0037855534 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 7203 | - |
dc.citation.endingpage | 7206 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.61.7203 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Gainer, GH | - |
dc.contributor.nonIdAuthor | Lam, JB | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Yang, W | - |
dc.contributor.nonIdAuthor | Jhe, W | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MULTIPLE-QUANTUM WELLS | - |
dc.subject.keywordPlus | RECOMBINATION DYNAMICS | - |
dc.subject.keywordPlus | LOCALIZED EXCITONS | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | SHIFT | - |
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