Dynamics of anomalous optical transitions in AlxGa1-xN alloys

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We present a comprehensive study of the optical characteristics of AlxGa1-xN epilayers (0 less than or equal to x less than or equal to 0.6) by means of photoluminescence (PL), PL excitation, and time-resolved PL spectroscopy. For AlxGa1-xN with large Al content, we observed an anomalous PL temperature dependence: (i) an "S-shaped'' PL peak energy shift (decrease-increase-decrease) and (ii) an "inverted S-shaped" spectral width broadening (increase-decrease-increase) with increasing temperature. We observed that the thermal decrease in integrated PL intensity was suppressed and the effective lifetime was enhanced in the temperature region showing the anomalous temperature-induced emission behavior, reflecting superior luminescence efficiency by suppressing nonradiative processes. All these features were enhanced as the Al mole fraction was increased. From these results, the anomalous temperature-induced emission shift is attributed to energy rail states due to alloy potential inhomogeneities in the AlxGa1-xN epilayers with large Al content.
Publisher
AMERICAN PHYSICAL SOC
Issue Date
2000-03
Language
English
Article Type
Article
Keywords

MULTIPLE-QUANTUM WELLS; RECOMBINATION DYNAMICS; LOCALIZED EXCITONS; EMISSION; SHIFT

Citation

PHYSICAL REVIEW B, v.61, no.11, pp.7203 - 7206

ISSN
1098-0121
DOI
10.1103/PhysRevB.61.7203
URI
http://hdl.handle.net/10203/74031
Appears in Collection
PH-Journal Papers(저널논문)
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