DIRECT EXPERIMENTAL-EVIDENCE FOR TRAP-STATE MEDIATED EXCITATION OF ER3+ IN SILICON

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The time evolution of the 1.54 mu m Er3+ photoluminescence intensity of Er-doped silicon following a 30 mu s excitation pulse is investigated. It is found that at 9 K, the 1.54 mu m luminescence from Er3+ continues to increase up to 50 mu s after the pulse is terminated, when excess photocarriers no longer exist. This provides the first direct experimental evidence that a state in the forbidden gap of silicon acts as the gateway to the excitation of Er3+. Further analysis indicates recombination of bound excitons to be the most likely excitation mechanism. (C) 1995 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1995-07
Language
English
Article Type
Article
Keywords

RARE-EARTH IMPURITIES; OPTICAL-PROPERTIES; LUMINESCENCE; SEMICONDUCTORS; MECHANISMS

Citation

APPLIED PHYSICS LETTERS, v.67, no.3, pp.377 - 379

ISSN
0003-6951
DOI
10.1063/1.114634
URI
http://hdl.handle.net/10203/74020
Appears in Collection
NT-Journal Papers(저널논문)
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