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Isolation process induced wafer warpage

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dc.contributor.authorJang, SAko
dc.contributor.authorYeo, ISko
dc.contributor.authorKim, YBko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorLee, SKko
dc.date.accessioned2013-03-02T14:25:59Z-
dc.date.available2013-03-02T14:25:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-07-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.1, no.1, pp.46 - 48-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/73970-
dc.description.abstractWafer warpage behavior during a local oxidation of silicon isolation process was investigated. Anisotropic etching of the front side nitride produced unbalanced stress states between front and back side nitride films, and caused a large wafer warpage. The maximum warpage was observed after field oxidation due to a wedge-effect of field oxide on the front side. Plastic deformation was shown to occur when the maximum warpage after field oxidation exceeded a critical value, although the warpage dramatically decreased after nitride stripping. (C) 1998 The Electrochemical Society, Inc. S1099-0062(98)01-008-6.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectOXIDE-UNGROWTH PHENOMENON-
dc.subjectLOCAL OXIDATION-
dc.subjectSILICON-WAFERS-
dc.subjectFLOW-
dc.titleIsolation process induced wafer warpage-
dc.typeArticle-
dc.identifier.wosid000079484400016-
dc.identifier.scopusid2-s2.0-0032123039-
dc.type.rimsART-
dc.citation.volume1-
dc.citation.issue1-
dc.citation.beginningpage46-
dc.citation.endingpage48-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJang, SA-
dc.contributor.nonIdAuthorYeo, IS-
dc.contributor.nonIdAuthorKim, YB-
dc.contributor.nonIdAuthorLee, SK-
dc.type.journalArticleArticle-
dc.subject.keywordPlusOXIDE-UNGROWTH PHENOMENON-
dc.subject.keywordPlusLOCAL OXIDATION-
dc.subject.keywordPlusSILICON-WAFERS-
dc.subject.keywordPlusFLOW-
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EE-Journal Papers(저널논문)
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