DC Field | Value | Language |
---|---|---|
dc.contributor.author | Adurodija, FO | ko |
dc.contributor.author | Song, J | ko |
dc.contributor.author | Yoon, KH | ko |
dc.contributor.author | Kim, SK | ko |
dc.contributor.author | Kim, SD | ko |
dc.contributor.author | Kwon, SH | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2013-03-02T14:16:12Z | - |
dc.date.available | 2013-03-02T14:16:12Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-10 | - |
dc.identifier.citation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.9, no.5, pp.361 - 366 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73931 | - |
dc.description.abstract | CuInSe(2) thin films have been prepared by high Se vapor selenization of co-sputtered Cu-ln alloy precursors within a partially closed graphite container. Cu-ln alloys with different compositions were investigated. X-ray diffraction (XRD) analysis of the films showed mainly CuIn(2) and Culling phases and the Culling peak intensity was found to increase as the alloy composition tended towards Cu-rich. A linear dependence of the alloy composition on the Cu/In deposition power was observed from energy dispersive analysis by X-rays (EDX). A three-fold volume expansion was exhibited by all the CuInSe(2) films after selenization at 500-550 degrees C. Scanning electron microscopy (SEM) analysis of the films showed large and densely packed crystal structures with sizes above 5 mu m. The CuInSe(2) films exhibited single phase chalcopyrite structure with preferential orientation in the (1 1 2) direction. The EDX composition analyses of the films showed Cu/In ratio ranging from 0.43 to 1.2, and Se/(Cu + In) ratios from 0.92 to 1.47. The measured film resistivities varied from 10(-1) to 10(5) Ohm cm. The Cu-In alloy precursors with Cu/In ratio less than 0.70 were found to form CuIn(3)Se(5) a defect chalcopyrite compound. All films were Se rich, with the exception of samples with very high Cu content. (C) 1998 Kluwer Academic Publishers. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.title | Preparation of CuInSe(2) thin films by selenization of co-sputtered Cu-In precursors | - |
dc.type | Article | - |
dc.identifier.wosid | 000077311000008 | - |
dc.identifier.scopusid | 2-s2.0-0032184543 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 361 | - |
dc.citation.endingpage | 366 | - |
dc.citation.publicationname | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Adurodija, FO | - |
dc.contributor.nonIdAuthor | Song, J | - |
dc.contributor.nonIdAuthor | Yoon, KH | - |
dc.contributor.nonIdAuthor | Kim, SK | - |
dc.contributor.nonIdAuthor | Kim, SD | - |
dc.contributor.nonIdAuthor | Kwon, SH | - |
dc.type.journalArticle | Article | - |
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