구리 흡착에 의한 비정질 실리콘 박막의 저온 결정화 거동Low-Temperature Crystallization of Amorphous Si Films by Cu Adsorption

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Low-temperature crystallization of amorphous silicon (a-Si) films by adsorbing metal on the films was investigated. Amorphous Si films were deposited by low-pressure chemical vapor deposition, spin-coated by metal solutions and subsequently annealed in Ar atmosphere. Polycrystalline silicon (poly-Si) thin-film transistors (TFT) were fabricated using the annealed Si films with Cu adsorption. And the thermodynamic parameters were extracted by observing crystallization behaviors.
Publisher
한국재료학회
Issue Date
1997-12
Language
Korean
Citation

한국재료학회지, v.7, no.3, pp.188 - 195

ISSN
1225-0562
URI
http://hdl.handle.net/10203/73922
Appears in Collection
MS-Journal Papers(저널논문)
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