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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides

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dc.contributor.authorAng, CHko
dc.contributor.authorLing, CHko
dc.contributor.authorCho, Byung Jinko
dc.contributor.authorKim, SJko
dc.contributor.authorCheng, ZYko
dc.date.accessioned2013-03-02T14:04:21Z-
dc.date.available2013-03-02T14:04:21Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-11-
dc.identifier.citationSOLID-STATE ELECTRONICS, v.44, no.11, pp.2001 - 2007-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10203/73879-
dc.description.abstractBased on carrier-separation measurement on pMOSFET, we show the existence of hole trap-assisted tunneling (HTAT) current after 10 keV X-ray irradiation on ultrathin gate oxide. The characteristics of this current have been studied in detail and compared with the corresponding current due to electrical stress. No essential difference is found between the HTAT currents due to ionizing radiation and electrical stress. The results indicate that these two currents have similar origin. (C) 2000 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectINDUCED LEAKAGE CURRENT-
dc.subjectSILICON DIOXIDE FILMS-
dc.subjectGENERATION-
dc.subjectINJECTION-
dc.subjectMECHANISM-
dc.titleRadiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides-
dc.typeArticle-
dc.identifier.wosid000165546700016-
dc.identifier.scopusid2-s2.0-0034322658-
dc.type.rimsART-
dc.citation.volume44-
dc.citation.issue11-
dc.citation.beginningpage2001-
dc.citation.endingpage2007-
dc.citation.publicationnameSOLID-STATE ELECTRONICS-
dc.identifier.doi10.1016/S0038-1101(00)00156-8-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLing, CH-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorCheng, ZY-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorMOS devices-
dc.subject.keywordAuthorreliability-
dc.subject.keywordAuthorultrathin oxide-
dc.subject.keywordAuthorstress-induced leakage current-
dc.subject.keywordAuthorradiation-induced leakage current-
dc.subject.keywordPlusINDUCED LEAKAGE CURRENT-
dc.subject.keywordPlusSILICON DIOXIDE FILMS-
dc.subject.keywordPlusGENERATION-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusMECHANISM-
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EE-Journal Papers(저널논문)
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