Does short wavelength lithography process degrade the integrity of thin gate oxide?
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, SJ | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.contributor.author | Chong, PF | ko |
| dc.contributor.author | Chor, EF | ko |
| dc.contributor.author | Ang, CH | ko |
| dc.contributor.author | Ling, CH | ko |
| dc.contributor.author | Joo, MS | ko |
| dc.contributor.author | Yeo, IS | ko |
| dc.date.accessioned | 2013-03-02T14:03:40Z | - |
| dc.date.available | 2013-03-02T14:03:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-10 | - |
| dc.identifier.citation | MICROELECTRONICS RELIABILITY, v.40, pp.1609 - 1613 | - |
| dc.identifier.issn | 0026-2714 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/73878 | - |
| dc.description.abstract | This paper presents the results of investigation on integrity of X-ray/E-beam irradiated thin gate oxides. A large increase of gate oxide leakage current is observed after irradiation on thin gate oxide under X-ray/E-beam lithography conditions. This radiation-induced leakage current (RILC) can be removed by a thermal annealing at 400 degrees C and above, without adverse effect to the oxide integrity. In addition, it is found that ionizing exposures do not significantly affect the breakdown and quasi-breakdown characteristics in ultra-thin oxide. (C) 2000 Elsevier Science Ltd. All rights reserved. | - |
| dc.language | English | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.title | Does short wavelength lithography process degrade the integrity of thin gate oxide? | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000089532800061 | - |
| dc.identifier.scopusid | 2-s2.0-1642615982 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 40 | - |
| dc.citation.beginningpage | 1609 | - |
| dc.citation.endingpage | 1613 | - |
| dc.citation.publicationname | MICROELECTRONICS RELIABILITY | - |
| dc.identifier.doi | 10.1016/S0026-2714(00)00178-5 | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Kim, SJ | - |
| dc.contributor.nonIdAuthor | Chong, PF | - |
| dc.contributor.nonIdAuthor | Chor, EF | - |
| dc.contributor.nonIdAuthor | Ang, CH | - |
| dc.contributor.nonIdAuthor | Ling, CH | - |
| dc.contributor.nonIdAuthor | Joo, MS | - |
| dc.contributor.nonIdAuthor | Yeo, IS | - |
| dc.type.journalArticle | Article; Proceedings Paper | - |
| dc.subject.keywordPlus | X-RAY-LITHOGRAPHY | - |
| dc.subject.keywordPlus | INDUCED LEAKAGE CURRENT | - |
| dc.subject.keywordPlus | RADIATION-DAMAGE | - |
| dc.subject.keywordPlus | BIPOLAR | - |
| dc.subject.keywordPlus | DEVICES | - |
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