DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jin-Baek | ko |
dc.contributor.author | Kim, JY | ko |
dc.contributor.author | Jung, MH | ko |
dc.date.accessioned | 2013-03-02T13:49:42Z | - |
dc.date.available | 2013-03-02T13:49:42Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-01 | - |
dc.identifier.citation | POLYMER, v.40, no.1, pp.273 - 276 | - |
dc.identifier.issn | 0032-3861 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73825 | - |
dc.description.abstract | Copolymers containing 3-hydroxycyclohexyl methacrylate (HCMA) were synthesized as a base polymer for ArF excimer laser lithography. The dry-etching rates of these polymers for CF4:CHF3 mixed gas were 1.1-1.2 times that of a novolac-based resist. The adhesion properties of the polymers were also studied by estimating the work of adhesion. When the content of the HCMA unit in the polymer exceeds 60 mol%, the work of adhesion of the resist is similar to those of polyvinylphenol (PVP)-based photoresists. A 0.19 mu m pattern profile was obtained using a resist based on the terpolymer containing HCMA and the conventional developer, 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution. (C) 1998 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | POSITIVE RESISTS | - |
dc.title | Synthesis of copolymers containing 3-hydroxycyclohexyl methacrylate and their application as ArF excimer laser resists | - |
dc.type | Article | - |
dc.identifier.wosid | 000076196300029 | - |
dc.identifier.scopusid | 2-s2.0-0032888824 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 273 | - |
dc.citation.endingpage | 276 | - |
dc.citation.publicationname | POLYMER | - |
dc.identifier.doi | 10.1016/S0032-3861(98)00218-3 | - |
dc.contributor.localauthor | Kim, Jin-Baek | - |
dc.contributor.nonIdAuthor | Kim, JY | - |
dc.contributor.nonIdAuthor | Jung, MH | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ArF photoresist | - |
dc.subject.keywordAuthor | 3-hydroxycyclohexyl methacrylate | - |
dc.subject.keywordAuthor | alicyclic methacrylate | - |
dc.subject.keywordPlus | POSITIVE RESISTS | - |
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