Magnetic field dependence of the resistance anomaly in superconducting mesoscopic aluminum structures

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dc.contributor.authorLee, Sko
dc.contributor.authorPark, KWko
dc.contributor.authorShin, Mincheolko
dc.contributor.authorLee, EHko
dc.contributor.authorKwon, HCko
dc.date.accessioned2013-03-02T13:07:17Z-
dc.date.available2013-03-02T13:07:17Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-
dc.identifier.citationSOLID-STATE ELECTRONICS, v.42, no.7-8, pp.1459 - 1462-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10203/73655-
dc.description.abstractA mesoscopic aluminum wire of 0.28 mu m width was prepared to investigate the resistance anomaly found in the superconducting transitions. We found that the radio-frequency (rf) radiation is an important factor in the anomaly, which strongly supports the recent work of Strunk et al. [Strunk, C., Bruyndoncx, V., Van Haesendonck, C., Moshchalkov, V. V., Bruynseraede, Y., Burk, B., Chien, C. -J. and Chandrasekhar, V., Phys. Rev. B, 1996, 53, 11332]. We performed a systematic study of the magnetic field dependence of the anomaly, which revealed the "mesa" type magnetoresistance near H = 0 for 1.13 K < T < 1.16 K. The boundary of the anomalous region in H-T space coincides with the upper critical field curve of the 2 mu m wide leads connected to the wire, implying a crucial role of the wide leads for the anomaly, having different T-c and dimensionality from those of the narrow wire. As soon as the leads become superconducting, the undissipated rf field transmits to the wire and induces the phase-slip centers to manifest the anomalous behavior. (C) 1998 Elsevier Science Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectTRANSITION-TEMPERATURE-
dc.subjectSINGLE-CRYSTALS-
dc.subjectAL LOOP-
dc.subjectMAGNETORESISTANCE-
dc.subjectWIRES-
dc.titleMagnetic field dependence of the resistance anomaly in superconducting mesoscopic aluminum structures-
dc.typeArticle-
dc.identifier.wosid000074864000075-
dc.identifier.scopusid2-s2.0-0032116490-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.issue7-8-
dc.citation.beginningpage1459-
dc.citation.endingpage1462-
dc.citation.publicationnameSOLID-STATE ELECTRONICS-
dc.identifier.doi10.1016/S0038-1101(98)00049-5-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorLee, S-
dc.contributor.nonIdAuthorPark, KW-
dc.contributor.nonIdAuthorLee, EH-
dc.contributor.nonIdAuthorKwon, HC-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusTRANSITION-TEMPERATURE-
dc.subject.keywordPlusSINGLE-CRYSTALS-
dc.subject.keywordPlusAL LOOP-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusWIRES-
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