DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jin-Baek | ko |
dc.contributor.author | Kim, H | ko |
dc.contributor.author | Lee, SH | ko |
dc.contributor.author | Moon, JT | ko |
dc.date.accessioned | 2013-02-28T06:54:58Z | - |
dc.date.available | 2013-02-28T06:54:58Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-08 | - |
dc.identifier.citation | POLYMER, v.40, no.18, pp.5213 - 5217 | - |
dc.identifier.issn | 0032-3861 | - |
dc.identifier.uri | http://hdl.handle.net/10203/73358 | - |
dc.description.abstract | Poly(2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl methacrylate) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 248 nm and also has a good transmittance at 193 nm. in addition, the polymer possesses good thermal stability up to 200 degrees C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl eater group begins at about 80 degrees C in a catalytic manner. Patterns of 0.24 mu m line/space were obtained with a conventional developer, 2.38 wt.% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser exposure system. (C) 1999 Elsevier Science Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | PHOTORESISTS | - |
dc.title | Poly (2-trimethylsilyl-2-propyl methacrylate-co-gamma-butyrolactone-2-yl methacrylate) for ArF lithography | - |
dc.type | Article | - |
dc.identifier.wosid | 000080444600023 | - |
dc.type.rims | ART | - |
dc.citation.volume | 40 | - |
dc.citation.issue | 18 | - |
dc.citation.beginningpage | 5213 | - |
dc.citation.endingpage | 5217 | - |
dc.citation.publicationname | POLYMER | - |
dc.identifier.doi | 10.1016/S0032-3861(99)00028-2 | - |
dc.contributor.localauthor | Kim, Jin-Baek | - |
dc.contributor.nonIdAuthor | Kim, H | - |
dc.contributor.nonIdAuthor | Lee, SH | - |
dc.contributor.nonIdAuthor | Moon, JT | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | ArF lithography | - |
dc.subject.keywordAuthor | chemically amplified resist | - |
dc.subject.keywordAuthor | silicon-containing polymer | - |
dc.subject.keywordPlus | PHOTORESISTS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.