Highly textured and conductive undoped ZnO film using hydrogen post-treatment

Abstract

We proposed a method to enhance the characteristics of undoped ZnO films by H-2 post-treatment using photochemical vapor deposition. The resistivity of a H-2-treated film decreased from 1 x 10(-2) to 2 x 10(-3) Omega cm, the haze ratio increased from 37% to 48%, and no degradation of total transmittance was observed. There are two possible explanations for these phenomena. First, hydrogen atoms assist the desorption of oxygen atoms from the film, resulting in decreased resistivity. Second, hydrogen atoms etch small grains growing among large ones on the surface of the film, resulting in a rough surface. (C) 1997 American Institute of Physics.