Substrate resistance effect on charge-pumping current in polycrystalline silicon thin film transistors

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A model is proposed to explain the pulse transition time dependence of the charge-pumping current in polycrystalline silicon thin film transistors (poly-Si TT;Ts). When the gate pulse transition times are short, the charge-pumping current is increased abnormally due to the substrate resistance of poly-Si TFTs. The model is in good agreement with measured charge-pumping current, which enables accurate trap characterization.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1999
Language
English
Article Type
Article; Proceedings Paper
Keywords

MOS-TRANSISTORS

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.4B, pp.2656 - 2659

ISSN
0021-4922
DOI
10.1143/JJAP.38.2656
URI
http://hdl.handle.net/10203/73054
Appears in Collection
RIMS Journal Papers
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