HgCdTe 양자소자를 위한 나노페터닝

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dc.contributor.author이희철ko
dc.contributor.author이철희ko
dc.contributor.author최중범ko
dc.contributor.author육종설ko
dc.contributor.author이성재ko
dc.contributor.author박경완ko
dc.contributor.author배수호ko
dc.contributor.author김충기ko
dc.date.accessioned2013-02-28T04:29:53Z-
dc.date.available2013-02-28T04:29:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1998-12-
dc.identifier.citation새물리, v.11, no.0, pp.147 - 150-
dc.identifier.issn0374-4914-
dc.identifier.urihttp://hdl.handle.net/10203/72786-
dc.languageKorean-
dc.publisher한국물리학회-
dc.titleHgCdTe 양자소자를 위한 나노페터닝-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume11-
dc.citation.issue0-
dc.citation.beginningpage147-
dc.citation.endingpage150-
dc.citation.publicationname새물리-
dc.contributor.localauthor이희철-
dc.contributor.nonIdAuthor이철희-
dc.contributor.nonIdAuthor최중범-
dc.contributor.nonIdAuthor육종설-
dc.contributor.nonIdAuthor이성재-
dc.contributor.nonIdAuthor박경완-
dc.contributor.nonIdAuthor배수호-
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EE-Journal Papers(저널논문)
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