High injection efficiency readout circuit for low resistance infra-red detector
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yoon, N | ko |
| dc.contributor.author | Kim, B | ko |
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.contributor.author | Kim, CK | ko |
| dc.date.accessioned | 2013-02-28T04:15:25Z | - |
| dc.date.available | 2013-02-28T04:15:25Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1999-09 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.35, no.18, pp.1507 - 1508 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/72728 | - |
| dc.description.abstract | A new input circuit, called the current mirroring direct injection (CMDI) circuit, is proposed for infra-red detector readouts. This new input circuit leads to almost 100% injection efficiency even in the case of low diode dynamic resistance. In addition, it can provide a stable detector bias and can be implemented with a small unit cell area and low power consumption. | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.title | High injection efficiency readout circuit for low resistance infra-red detector | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000082803500008 | - |
| dc.identifier.scopusid | 2-s2.0-0033365443 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 35 | - |
| dc.citation.issue | 18 | - |
| dc.citation.beginningpage | 1507 | - |
| dc.citation.endingpage | 1508 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Yoon, N | - |
| dc.contributor.nonIdAuthor | Kim, B | - |
| dc.contributor.nonIdAuthor | Kim, CK | - |
| dc.type.journalArticle | Article | - |
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