Metal-Organic Chemical Vapor Deposition of Semiconducting III/VI In$_2$Se$_3$ Thin Films From The Single-Source Precursor, In[SeC(SiMe$_3$)$_3$]$_3$

Abstract

Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe(3))(3)](3) as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).