Monolithic implementation of coaxial line on silicon substrate

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A coaxial line has been monolithically fabricated on silicon substrate using Benzocylobutene (BCB) for dielectric spacers. Because of its closed structure, it is an effective interconnection method to reduce parasitic radiation and coupling effect. The fabricated coaxial line with 2 mm length has high isolation (<-60 dB), low attenuation (<0.08 dB/mm) and low return loss (<-32 dB) in the range of 1 GHz-20 GHz, It can be easily fabricated using standard silicon IC technologies, and requires no wafer thinning and backside processing In view of cost performance and integration density, the coaxial line on low-resistivity silicon is shown to be suitable for RF interconnect and multichip module (MCM) package applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2000-10
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.10, no.10, pp.406 - 408

ISSN
1531-1309
DOI
10.1109/75.877227
URI
http://hdl.handle.net/10203/72357
Appears in Collection
EE-Journal Papers(저널논문)
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