Study of quasi-two-dimensional hole gas in Si/SixGe1-x/Si quantum wells

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Quasi-two-dimensional hole gas in strained Si/SixGe1-x/Si quantum well structure is investigated both theoretically and experimentally. The hole effective mass and the charge distribution in the structure are obtained from the self-consistent solution of the Schrodinger-Poisson equations. The calculation results show the dependence of the averaged mass on the measurement temperature and the averaged mass of 0.20 m(0) at T = 4 K. High quality Si/Si0.8Ge0.2/Si p-type modulation-doped quantum well is grown by molecular beam epitaxy and the electrical properties measured. Hall mobility as high as similar to 10,400 cm(2)/V . s with a sheet carrier concentration of similar to 1.1 x 10(12) cm(-2) and an effective mass of similar to 0.30 m(0) is obtained at T = 4 K.
Publisher
JAPAN J APPLIED PHYSICS
Issue Date
1996-02
Language
English
Article Type
Article; Proceedings Paper
Keywords

CHANNEL; LAYER

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.849 - 852

ISSN
0021-4922
URI
http://hdl.handle.net/10203/71631
Appears in Collection
EE-Journal Papers(저널논문)
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