Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate bias

Abstract

We have observed that excess low-field leakage currents generated by 10 keV X-ray irradiation in thin gate oxides (4.5 nm) could be reduced by applying a low gate bias to the oxides after irradiation, regardless of the polarity of the applied gate bias. The reduction rate of radiation-induced leakage current (RILC) increased with the applied gate bias and began to saturate after 10(5) s. In addition, the reduction rate of RILC was significantly enhanced in a H-2 ambient, suggesting a strong link between the reduction of RILC and trapped-hole annealing.