DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이희철 | ko |
dc.contributor.author | 박승만 | ko |
dc.contributor.author | 김근홍 | ko |
dc.contributor.author | 김재묵 | ko |
dc.contributor.author | 김충기 | ko |
dc.date.accessioned | 2013-02-27T22:22:39Z | - |
dc.date.available | 2013-02-27T22:22:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1996-12 | - |
dc.identifier.citation | 응용물리, v.9, no.특별호, pp.38 - 41 | - |
dc.identifier.issn | 1013-7009 | - |
dc.identifier.uri | http://hdl.handle.net/10203/71183 | - |
dc.language | Korean | - |
dc.publisher | 한국물리학회 | - |
dc.title | 인듐 확산에 의해 제작된 HgCdTe 아이오드의 전기적 특성 | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 특별호 | - |
dc.citation.beginningpage | 38 | - |
dc.citation.endingpage | 41 | - |
dc.citation.publicationname | 응용물리 | - |
dc.contributor.localauthor | 이희철 | - |
dc.contributor.nonIdAuthor | 박승만 | - |
dc.contributor.nonIdAuthor | 김근홍 | - |
dc.contributor.nonIdAuthor | 김재묵 | - |
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