열 처리 조건에 따른 HgCdTe의 접합 특성HgCdTe Junction Characteristics after the Junction Annealing Process
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정희찬 | ko |
| dc.contributor.author | 김관 | ko |
| dc.contributor.author | 이희철 | ko |
| dc.contributor.author | 김흥국 | ko |
| dc.contributor.author | 김재묵 | ko |
| dc.date.accessioned | 2013-02-27T21:59:19Z | - |
| dc.date.available | 2013-02-27T21:59:19Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1995-02 | - |
| dc.identifier.citation | 전자공학회지, v.32, no.2, pp.332 - 338 | - |
| dc.identifier.issn | 1975-2377 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/71082 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | 열 처리 조건에 따른 HgCdTe의 접합 특성 | - |
| dc.title.alternative | HgCdTe Junction Characteristics after the Junction Annealing Process | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 32 | - |
| dc.citation.issue | 2 | - |
| dc.citation.beginningpage | 332 | - |
| dc.citation.endingpage | 338 | - |
| dc.citation.publicationname | 전자공학회지 | - |
| dc.contributor.localauthor | 이희철 | - |
| dc.contributor.nonIdAuthor | 정희찬 | - |
| dc.contributor.nonIdAuthor | 김관 | - |
| dc.contributor.nonIdAuthor | 김흥국 | - |
| dc.contributor.nonIdAuthor | 김재묵 | - |
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