DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, H | ko |
dc.contributor.author | Park, In-Cheol | ko |
dc.date.accessioned | 2013-02-27T19:35:29Z | - |
dc.date.available | 2013-02-27T19:35:29Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1999-10 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.35, no.22, pp.1929 - 1931 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70420 | - |
dc.description.abstract | To increase the memory bandwidth of SDRAM (synchronous DRAM) that is commonly employed as external memory in video applications such as MPEG2, a memory address translation method is proposed for minimising the number of overhead cycles needed for row-activations and precharges. The features of SDRAM and the characteristics of memory accesses in video processing applications are considered to find a suitable address translation method. Experimental results show that the proposed method increases the memory bandwidth by 44% over that possible using conventional linear translation. | - |
dc.language | English | - |
dc.publisher | IEE-INST ELEC ENG | - |
dc.title | Array address translation for SDRAM-based video processing applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000087172500029 | - |
dc.identifier.scopusid | 2-s2.0-0033355034 | - |
dc.type.rims | ART | - |
dc.citation.volume | 35 | - |
dc.citation.issue | 22 | - |
dc.citation.beginningpage | 1929 | - |
dc.citation.endingpage | 1931 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.contributor.localauthor | Park, In-Cheol | - |
dc.contributor.nonIdAuthor | Kim, H | - |
dc.type.journalArticle | Article | - |
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