Photoinduced Current Transient Spectroscopy(PICTS)를 이용한 다공질 실리콘의 깊은준위 연구
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 권영해 | ko |
| dc.contributor.author | 이주영 | ko |
| dc.contributor.author | 이영한 | ko |
| dc.contributor.author | 조훈영 | ko |
| dc.contributor.author | 이욱형 | ko |
| dc.contributor.author | 이주천 | ko |
| dc.date.accessioned | 2013-02-27T18:59:38Z | - |
| dc.date.available | 2013-02-27T18:59:38Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998-01 | - |
| dc.identifier.citation | 응용물리, v.11, no.1, pp.45 - 49 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/70245 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Photoinduced Current Transient Spectroscopy(PICTS)를 이용한 다공질 실리콘의 깊은준위 연구 | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 11 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 45 | - |
| dc.citation.endingpage | 49 | - |
| dc.citation.publicationname | 응용물리 | - |
| dc.contributor.nonIdAuthor | 권영해 | - |
| dc.contributor.nonIdAuthor | 이주영 | - |
| dc.contributor.nonIdAuthor | 이영한 | - |
| dc.contributor.nonIdAuthor | 조훈영 | - |
| dc.contributor.nonIdAuthor | 이욱형 | - |
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