Post Hydrogen Treatment Effects on Boron-Doped a -SiC:H p-Layer of a-Si:H using a Mercury-Sensitized Photo CVD Method

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dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2013-02-27T18:45:17Z-
dc.date.available2013-02-27T18:45:17Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1997-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.36, no.10, pp.6230 - 6236-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/70183-
dc.description.abstractPost hydrogen treatment effects of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p-layer of p/i/n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated by measuring-the thickness, electrical, and optical properties of the film before and after hydrogen treatment. It was found that the boron-doped a-SiC:H film mas simultaneously etched and passivated by the treatment. The performance of the cell with a hydrogen treated p-layer was improved by similar to 7% due to an increase in open circuit voltage (V-oc) and fill factor (F.F.), compared to that of the untreated cell, although the p-layer thickness was nearly identical in both cases, The increase in V-oc and F.F, could be explained by an increase in the built-in potential due to a decrease in the film activation energy. This electrical property improvement was well explained by the passivation effect of a SiH2/SiH ratio decrease of the film calculated by FTIR spectra. These film charges by post hydrogen treatment are considered to occur in the bulk of the boron-doped a-SiC:H film.-
dc.languageEnglish-
dc.publisherJapan Soc Applied Physics-
dc.subjectAMORPHOUS-SILICON-
dc.subjectCONVERSION EFFICIENCY-
dc.subjectPASSIVATION-
dc.subjectTEMPERATURE-
dc.titlePost Hydrogen Treatment Effects on Boron-Doped a -SiC:H p-Layer of a-Si:H using a Mercury-Sensitized Photo CVD Method-
dc.typeArticle-
dc.identifier.wosidA1997YJ90600013-
dc.identifier.scopusid2-s2.0-0031246333-
dc.type.rimsART-
dc.citation.volume36-
dc.citation.issue10-
dc.citation.beginningpage6230-
dc.citation.endingpage6236-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorLim, Koeng Su-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorpost hydrogen treatment-
dc.subject.keywordAuthormercury-sensitized photo-CVD-
dc.subject.keywordAuthora-Si:H solar cell-
dc.subject.keywordAuthorboron-doped a-SiC:H-
dc.subject.keywordAuthoretching effect-
dc.subject.keywordAuthorpassivation-
dc.subject.keywordAuthoractivation energy-
dc.subject.keywordAuthorconductivity-
dc.subject.keywordAuthorbuilt-in potential-
dc.subject.keywordAuthorhydrogen diffusion-
dc.subject.keywordAuthorSiH2/SiH ratio-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusCONVERSION EFFICIENCY-
dc.subject.keywordPlusPASSIVATION-
dc.subject.keywordPlusTEMPERATURE-
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