DC Field | Value | Language |
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dc.contributor.author | Lim, Koeng Su | ko |
dc.date.accessioned | 2013-02-27T18:45:17Z | - |
dc.date.available | 2013-02-27T18:45:17Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1997-01 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.36, no.10, pp.6230 - 6236 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10203/70183 | - |
dc.description.abstract | Post hydrogen treatment effects of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p-layer of p/i/n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated by measuring-the thickness, electrical, and optical properties of the film before and after hydrogen treatment. It was found that the boron-doped a-SiC:H film mas simultaneously etched and passivated by the treatment. The performance of the cell with a hydrogen treated p-layer was improved by similar to 7% due to an increase in open circuit voltage (V-oc) and fill factor (F.F.), compared to that of the untreated cell, although the p-layer thickness was nearly identical in both cases, The increase in V-oc and F.F, could be explained by an increase in the built-in potential due to a decrease in the film activation energy. This electrical property improvement was well explained by the passivation effect of a SiH2/SiH ratio decrease of the film calculated by FTIR spectra. These film charges by post hydrogen treatment are considered to occur in the bulk of the boron-doped a-SiC:H film. | - |
dc.language | English | - |
dc.publisher | Japan Soc Applied Physics | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | CONVERSION EFFICIENCY | - |
dc.subject | PASSIVATION | - |
dc.subject | TEMPERATURE | - |
dc.title | Post Hydrogen Treatment Effects on Boron-Doped a -SiC:H p-Layer of a-Si:H using a Mercury-Sensitized Photo CVD Method | - |
dc.type | Article | - |
dc.identifier.wosid | A1997YJ90600013 | - |
dc.identifier.scopusid | 2-s2.0-0031246333 | - |
dc.type.rims | ART | - |
dc.citation.volume | 36 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 6230 | - |
dc.citation.endingpage | 6236 | - |
dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Lim, Koeng Su | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | post hydrogen treatment | - |
dc.subject.keywordAuthor | mercury-sensitized photo-CVD | - |
dc.subject.keywordAuthor | a-Si:H solar cell | - |
dc.subject.keywordAuthor | boron-doped a-SiC:H | - |
dc.subject.keywordAuthor | etching effect | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | activation energy | - |
dc.subject.keywordAuthor | conductivity | - |
dc.subject.keywordAuthor | built-in potential | - |
dc.subject.keywordAuthor | hydrogen diffusion | - |
dc.subject.keywordAuthor | SiH2/SiH ratio | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | CONVERSION EFFICIENCY | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | TEMPERATURE | - |
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